URLhttps://doi.org/10.1016/j.est.2022.106572 Nitrogen-doped graphene.jpg The N-Graphene... of N-Graphene/SiOC. The amorphous nature and nanosphere morphology of N-Graphene/SiOC was established by XRD and TEM results. The existence of a distorted carbon phase in both SiOC and N-Graphene... density of 1000 mAg−1, the specific capacity retention was 415.8 mAhg−1 for N-Graphene/SiOC.... Moreover, nanosphere N-Graphene/SiOC exhibited excellent electrochemical activity, demonstrating high
URLhttps://doi.org/10.1016/j.est.2022.106572 Nitrogen-doped graphene.jpg The N-Graphene... of N-Graphene/SiOC. The amorphous nature and nanosphere morphology of N-Graphene/SiOC was established by XRD and TEM results. The existence of a distorted carbon phase in both SiOC and N-Graphene... density of 1000 mAg−1, the specific capacity retention was 415.8 mAhg−1 for N-Graphene/SiOC.... Moreover, nanosphere N-Graphene/SiOC exhibited excellent electrochemical activity, demonstrating high
with high mobility. Stacking structures composed of p-type BP and n-type transition metal dichalcogenides can produce an atomically sharp interface with van der Waals interaction which leads to p–n diode functionality. In this study, for the first time, we fabricated a heterojunction p–n diode composed... quantum efficiency of 103% are achieved in the BP/WS2 van der Waals p–n diode, which is unprecedented for BP/transition metal dichalcogenides heterostructures. The BP/WS2 van der Waals p–n diodes have
, Spintronic devices (Gr/TMDs heterostructures), Charge density wave (CDW), p-n & p-i-n diodes
oxide (N-rGO), the resulting NBCFM/N-rGO catalyst shows further boosted bifunctional oxygen
precursor, [2-(N-methylamino) 1-methyl ethyl cyclopentadienyl] bis(dimethylamino) titanium (CMENT... is the only surface species for CMENT, whereas N(CH3)2 (NMe2) ligands remain on the surface for TDMAT
. Meanwhile, we prepared inorganic Li-N and LiF-rich SEIs with high ionic conductivity using... and inorganic Li-N and LiF-rich SEI with stable and superior ionic conductivity on the Ti-SiOx@C
. Meanwhile, we prepared inorganic Li-N and LiF-rich SEIs with high ionic conductivity using... and inorganic Li-N and LiF-rich SEI with stable and superior ionic conductivity on the Ti-SiOx@C
(CDW), p-n & p-i-n diodes, photodetectors, memory devices, solar cells, computational condensed
=1&t_ref_content=generic&t_ref=search&paid_fl=n#seq=0 지금은 마감되었지만 이원준 교수님을 통해 추가 지원 가능
URLhttps://pubs.acs.org/doi/abs/10.1021/acs.nanolett.9b05212 nl9b05212_0007.gif Among p–n
sites for the following reaction, –SiNH2* group or –Si*. N⋅ radicals in N2 plasma may not remove
Yang , Woo Seung Kang , Sun-Jae Kim 저널명Journal of Energy Storage 발표일2023-03-01 내 용The N-Graphene
Yang , Woo Seung Kang , Sun-Jae Kim 저널명Journal of Energy Storage 발표일2023-03-01 내 용The N-Graphene
Yang , Woo Seung Kang , Sun-Jae Kim 저널명Journal of Energy Storage 발표일2023-03-01 내 용The N-Graphene
발표일2020-02-21 내 용Among p–n junction devices with multilayered heterostructures with WSe2 and MoSe2